XP151A13AOMR详细说明:
General De
The XP151A13A0MR is a N-Channel Power MOS FET with low on Low on-state resistance : Rds (on) = 0.1Ω ( Vgs = 4.5V )
state resistance and ultra high-speed switching characteristics. Rds (on) = 0.14Ω ( Vgs = 2.5V )
Because high-speed switching is possible, the IC can be efficiently Rds (on) = 0.25Ω ( Vgs = 1.5V )
set thereby saving energy. Ultra high-speed switching
In order to counter static, a gate protect diode is built-in. Gate Protect Diode Built-in
The small SOT-23 package makes high density mounting possible. Operational Voltage : 1.5V
High density mounting : SOT - 23
N-Channel Power MOS FET ■ Applications
◆ DMOS Structure ●Notebook PCs
◆ Low On-State Resistance : 0.1Ω (max) ●Cellular and portable phones
◆ Ultra High-Speed Switching ●On - board power supplies
◆ Gate Protect Diode B
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